Disco develops laser ingot slicing method to speed SiC wafer production
Tokyo-based equipment maker Disco Corp has developed the KABRA (Key Amorphous-Black Repetitive Absorption) laser ingot slicing method. Implementing the process is said to enable high-speed production of silicon carbide (SiC) wafers, increase the number of wafers produced from a single ingot, and dramatically improve productivity.Existing methods for slicing wafers from a silicon carbide ingot mainly use multiple diamond wire saws for mass-producing wafers because the processing time is long due to the high rigidity of SiC. The number of wafers produced from a single ingot is also small due to the large amount of material lost in the slicing sections. This has been a major factor that increases the cost of producing SiC power devices, hindering their introduction to the market and the widespread use of SiC power devices, says Disco.