GaN-Based AESA Radars Near Full Production
Gallium-nitride (GaN) transistors have become a staple in military-grade radars, thanks to their ability to boost the amplification of microwave signals.
GaN also carries a higher voltage than other semiconductor materials, such as silicon, allowing the system to operate on less power and produce less heat. Because of these properties, Raytheon is using GaN-based active electronically scanned arrays (AESAs) to refine the Patriot Air and Missile Defense System. With this latest upgrade, Raytheon is one step closer to replacing the single forward panel on existing Patriot systems with a series of AESA radar antennas. Full production is scheduled for early next year.