GaN Production Process Shifts to 6-Inch Wafers As Market Grows
Although gallium nitride GaN power amplifiers support a wide range of frequency bandwidths and high breakdown voltages, the manufacturing process remains too costly to exploit these benefits on a large scale, due to the limited capacity of GaN production lines.
In an attempt to increase its GaN capabilities, Qorvo recently scaled its QGaN25 production process to support monolithic microwave integrated circuits MMICs on 6-inch wafers, up from its previous 4-inch substrates.For Qorvo, the transition is expected to more than double its existing GaN-on-silicon carbide SiC manufacturing capabilities, the company said in a recent statement. The 6-inch GaN wafers have more than twice the usable surface area than previous 4-inch wafers, resulting in a larger yield of integrated circuits ICs from each platform. This production process will also reduce the production cost of its GaN-based technologies, which are used in commercial base receiver stations BTSs, point-to-point radios, and military radars.